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| PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 22 k Rev. 03 -- 24 January 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP resistor-equipped transistors. Table 1: Product overview Package Philips PEMD17 PUMD17 SOT666 SOT363 JEITA SC-88 PEMB17 PUMB17 PEMH17 PUMH17 PNP/PNP complement NPN/NPN complement Type number 1.2 Features s s s s Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost 1.3 Applications s Low current peripheral driver s Control of IC inputs s Replacement of general-purpose transistors in digital applications 1.4 Quick reference data Table 2: Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio Conditions open base Min 33 0.37 Typ 47 0.47 Max 50 100 61 0.57 Unit V mA k Philips Semiconductors PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 22 k 2. Pinning information Table 3: Pin 1 2 3 4 5 6 Pinning Description GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1 1 2 3 001aab555 TR1 R2 R1 R1 R2 TR2 Simplified outline 6 5 4 Symbol 6 5 4 1 2 3 006aaa143 3. Ordering information Table 4: Ordering information Package Name PEMD17 PUMD17 SC-88 Description plastic surface mounted package; 6 leads plastic surface mounted package; 6 leads Version SOT666 SOT363 Type number 4. Marking Table 5: PEMD17 PUMD17 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking codes Marking code [1] 5N D9* Type number 9397 750 14367 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 -- 24 January 2005 2 of 12 Philips Semiconductors PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 22 k 5. Limiting values Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage TR1 positive negative VI input voltage TR2 positive negative IO ICM Ptot output current (DC) peak collector current total power dissipation SOT363 SOT666 Tstg Tj Tamb Per device Ptot total power dissipation SOT363 SOT666 [1] [2] Conditions open emitter open base open collector Min - Max 50 50 10 +40 -10 +10 -40 100 100 200 200 +150 150 +150 Unit V V V V V V V mA mA mW mW C C C Per transistor; for the PNP transistor with negative polarity Tamb 25 C [1] [1] [2] -65 -65 storage temperature junction temperature ambient temperature Tamb 25 C [1] [1] [2] - 300 300 mW mW Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint. Reflow soldering is the only recommended soldering method. 9397 750 14367 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 -- 24 January 2005 3 of 12 Philips Semiconductors PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 22 k 6. Thermal characteristics Table 7: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient SOT363 SOT666 Per device Rth(j-a) thermal resistance from junction to ambient SOT363 SOT666 [1] [2] Conditions Tamb 25 C [1] [1] [2] Min Typ Max Unit Per transistor - - 625 625 K/W K/W Tamb 25 C [1] [1] [2] - - 416 416 K/W K/W Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint. Reflow soldering is the only recommended soldering method. 7. Characteristics Table 8: Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO ICEO Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage off-state input voltage on-state input voltage bias resistor 1 (input) bias resistor ratio collector capacitance TR1 (NPN) TR2 (PNP) VCB = -10 V; IE = ie = 0 A; f = 1 MHz 2.5 3 pF pF Conditions VCB = 50 V; IE = 0 A VCE = 30 V; IB = 0 A VCE = 30 V; IB = 0 A; Tj = 150 C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 5 mA IC = 10 mA; IB = 0.5 mA VCE = 5 V; IC = 100 A VCE = 0.3 V; IC = 2 mA Min 60 4 33 0.37 Typ 1.7 2.7 47 0.47 Max 100 1 50 110 150 1.2 61 0.57 mV V V k Unit nA A A A Per transistor; for the PNP transistor with negative polarity IEBO hFE VCEsat VI(off) VI(on) R1 R2/R1 Cc 9397 750 14367 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 -- 24 January 2005 4 of 12 Philips Semiconductors PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 22 k 103 hFE (2) 006aaa184 102 006aaa185 (1) (3) VCEsat (mV) 102 (1) (2) (3) 10 1 10-1 1 10 I C (mA) 102 10 10-1 1 10 I C (mA) 102 VCE = 5 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C Fig 1. TR1 (NPN): DC current gain as a function of collector current; typical values 102 VI(on) (V) 10 (2) (1) Fig 2. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 10 006aaa187 006aaa186 VI(off) (V) (1) (2) (3) 1 (3) 1 10-1 10-1 1 10 IC (mA) 102 10-1 10-2 10-1 1 I C (mA) 10 VCE = 0.3 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C VCE = 5 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C Fig 3. TR1 (NPN): On-state input voltage as a function of collector current; typical values Fig 4. TR1 (NPN): Off-state input voltage as a function of collector current; typical values 9397 750 14367 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 -- 24 January 2005 5 of 12 Philips Semiconductors PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 22 k 103 hFE (1) 006aaa208 -102 006aaa209 (2) VCEsat (mV) (1) (2) (3) 102 (3) 10 1 -10-1 -1 -10 IC (mA) -102 -10 -10-1 -1 -10 IC (mA) -102 VCE = -5 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C Fig 5. TR2 (PNP): DC current gain as a function of collector current; typical values -102 VI(on) (V) -10 (1) (2) Fig 6. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values -10 006aaa211 006aaa210 VI(off) (V) (1) (2) (3) -1 (3) -1 -10-1 -10-1 -1 -10 IC (mA) -102 -10-1 -10-2 -10-1 -1 IC (mA) -10 VCE = -0.3 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C VCE = -5 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C Fig 7. TR2 (PNP): On-state input voltage as a function of collector current; typical values Fig 8. TR2 (PNP): Off-state input voltage as a function of collector current; typical values 9397 750 14367 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 -- 24 January 2005 6 of 12 Philips Semiconductors PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 22 k 8. Package outline Plastic surface mounted package; 6 leads SOT363 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-11-08 Fig 9. Package outline SOT363 (SC-88) 9397 750 14367 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 -- 24 January 2005 7 of 12 Philips Semiconductors PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 22 k Plastic surface mounted package; 6 leads SOT666 D A E X S YS HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 wMA Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 01-08-27 04-11-08 Fig 10. Package outline SOT666 9397 750 14367 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 -- 24 January 2005 8 of 12 Philips Semiconductors PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 22 k 9. Packing information Table 9: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number PEMD17 PUMD17 PUMD17 [1] [2] [3] [1] Package SOT666 SOT363 SOT363 Description 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 [2] [3] Packing quantity 3000 -115 -125 4000 -115 10000 -135 -165 For further information and the availability of packing methods, see Section 14. T1: normal taping T2: reverse taping 9397 750 14367 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 -- 24 January 2005 9 of 12 Philips Semiconductors PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 22 k 10. Revision history Table 10: Revision history Release date Data sheet status Product data sheet Change notice Doc. number 9397 750 14367 Supersedes PUMD17_2 Document ID Modifications: PEMD17_PUMD17_3 20050124 * * * * * * This data sheet is an enhancement of data sheet PUMD17_2. The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. Type PEMD17 added Table 8 Characteristics: Vi(on) input-on voltage and Vi(off) input-off voltage renamed to VI(on) on-state input voltage and VI(off) off-state input voltage Figure 1, 2, 3, 4, 5, 6, 7 and 8 electrical graphs for TR1 (NPN) and TR2 (PNP) added Table 9 Packing information added Product specification Product specification 9397 750 13099 9397 750 11866 PUMD17_1 - PUMD17_2 PUMD17_1 20040422 20031016 9397 750 14367 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 -- 24 January 2005 10 of 12 Philips Semiconductors PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 22 k 11. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14367 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 -- 24 January 2005 11 of 12 Philips Semiconductors PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 22 k 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 (c) Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 24 January 2005 Document number: 9397 750 14367 Published in The Netherlands |
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